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| RB420D Diodes Schottky barrier diode RB420D !Applications Low power rectification !External dimensions (Units : mm) 2.80.2 1.6 0.4 +0.1 -0.05 0.15 !Construction Silicon epitaxial planar (All leads have the same dimensions) !Circuit ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Absolute maximum ratings (Ta=25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature 60Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 0.1 1 125 -40+125 Unit V V A A C C !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals Note) ESD sensitive product handling required. Symbol VF IR CT Min. - - - Typ. - - 6.0 Max. 0.45 1 - Unit V A pF IF=10mA VR=10V Conditions VR=10V, f=1MHz 0.30.6 D3B !Features 1) Small surface mounting type. (SMD3) 2) Low IR. (IR=50nA Typ.) 3) High reliability 2.90.2 1.90.2 0.95 0.95 1.1 +0.2 -0.1 0.80.1 +0.2 -0.1 0~0.1 +0.1 -0.06 RB420D Diodes !Electrical characteristic curves (Ta=25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 1m 100 50 FORWARD CURRENT : IO (A) REVERSE CURRENT : IR (A) 100m Ta =1 25 C 75 C 25 C -2 5C 100 Ta=125C 20 10 5 10m 10 75C 1m 1 25C 100 100n 2 0 0 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10n 0 5 10 15 20 25 30 35 2 4 6 8 10 12 14 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics Ta=25C SURGE CURRENT : I surge (A) 100 Io CURRENT (%) 20 80 60 40 20 0 0 I surge 10 PULSE WIDTH P=50% 0 100 1m 10m 100m 1 25 50 75 100 125 PULSE WIDTH (sec) AMBIENT TEMPERATURE : Ta (C) Fig.4 Surge current characteristics Fig.5 Derating curve (mounting on glass epoxy PCBs) |
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